Press Release

Solomon Systech Grabs Technological Achievement Grand Award of 2014 Hong Kong Awards for Industries

(Hong Kong – 19 Dec, 2014) Solomon Systech Limited (“Solomon Systech”) is pleased to announce that its SSD2080 High-Definition TFT LCD Driver Controller IC for Metal Oxide Panels has garnered the Grand Technology Achievement Award of the prestigious Hong Kong Awards for Industries (“HKAI”) this year.


Supporting metal oxide panel technology, the award winning TFT LCD Driver Controller SSD2080 is highly cost-effective, ideal for meeting the growing demand for low power, high speed and high performance smartphone applications. It is China’s first commercialized TFT LCD Driver IC supporting High Definition metal oxide panels. With its innovative functions, this technology overcomes some of the challenges that current panel technologies are facing. It has played an important role in marking a key milestone and boosting the technological advancement of the display industry in China.


The key competitive advantages of the technology include:

  • Enables lower system cost – the technology facilitates the reduction in panel production costs compared with other commonly used technologies, like LTPS/AMOLED.
  • Supports high resolution (up to 400ppi) and enables display of vivid images – images are processed and enhanced by the Solomon Systech IP technology of Color Enhancement, which enables enhancement of color (saturation), contrast, sharpness and sunlight readability, making the images as vivid and clear as the higher cost AMOLED and LTPS displays.
  • Enables low power consumption – with self-developed IP technologies of “frame skipping”, “interlaced mode” and patented technology of Contents Adaptive Backlight Control (CABC), the average display power consumption of metal oxide panels can be reduced by 25% and increases the smartphone’s operating time by 10%.
  • Highly flexible – the technology supports a wide range of resolutions and panels for various smartphone applications.
  • Achieves narrow bezel design and maximizes screen display area – the compact design of the IC together with the high electron mobility characteristic of metal oxide panels enable modules with narrow bezel design (<1mm), which in turn maximizes the display area of the screen in smartphones. This makes a perfect match with the current trend of smartphone design.


This innovative solution has successfully designed-in with top tier China smartphones. It is expected to become a dominating technology with great potentials to capture the growing smartphone market.


“We are most honored to have won this prestigious award, which is a great recognition for our products and most importantly, our technological innovation capability. It is the second time for Solomon Systech to win this HKAI Technological Achievement Grand Award. In the past 10 years, apart from Technological Achievement, we also garnered the HKAI Grand Awards in Export Marketing as well as Productivity and Quality. These are our key areas of focus. We shall continue to strive for excellence in these areas to set ourselves apart from others and to capture the market opportunities arise,” said Dr. Humphrey Leung, Group CEO, Solomon Systech Limited.


Championed by the Government, the HKAI aims to recognize the outstanding achievements of Hong Kong enterprises in pursuit of high technology and high value-added activities, and to commend excellence in various aspects of their performance. Technological Achievement Award is among the six categories of the HKAI. With Hong Kong Science and Technology Parks Corporation as the leading organizer, the Technological Achievement Award highlights the technological achievement of Hong Kong enterprises as well as raises the profile of Hong Kong industries both locally and internationally.  It is one of the most highly regarded honours in Hong Kong for technology-based organisations.


Solomon Systech Grabs Technological Achievement Grand Award of

2014 Hong Kong Awards for Industries

SSD2080 High-Definition TFT LCD Driver Controller IC for Metal Oxide